Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2005-01-11
2005-01-11
Nguyen, Patricia (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S288000, C330S291000
Reexamination Certificate
active
06842075
ABSTRACT:
A transistor bias circuit is provided that is capable of operating from a power supply voltage that is slightly higher than twice the base-emitter voltage of the transistor to be biased. The bias circuit includes a transistor connected in a current-mirror configuration with the transistor to be biased. A feedback circuit maintains the mirrored current at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. In a preferred embodiment, the biased transistor is concurrently in both a Darlington and the current mirror configuration. Moreover, a feedback transistor in the feedback circuit is also concurrently in the Darlington configuration, thus providing an efficient biasing arrangement for an amplifier block based on the Darlington arrangement.
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Yamamoto, et al., “A 3.2-V Operation Single-Chip Dual-Band A1GaAs/GaAs HBT MMIC Power Amplifier with Active Feedback Circuit Technique” in IEEE Journal of Solid-State Circuits, Aug. 2000, pp. 1109-1120.
Johnson Douglas M.
Liwinski Henry Z.
Anadigics Inc.
Morgan & Lewis & Bockius, LLP
Nguyen Patricia
LandOfFree
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