Gadolinium doped germanium

Metal treatment – Stock – Ferrous

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

148185, 148190, 357 61, 357 64, 357 67, H01L 29167

Patent

active

039757560

ABSTRACT:
A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction.

REFERENCES:
patent: 3311510 (1967-03-01), Mandelkorn
patent: 3355638 (1967-11-01), Gaudlitz
patent: 3662232 (1972-05-01), Stahr
Sze, Physics of Semiconductor Devices, Wiley-Interscience, N.Y., 1969, p. .

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gadolinium doped germanium does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gadolinium doped germanium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gadolinium doped germanium will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1489892

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.