GaAs.sub.1-x P.sub.x electroluminescent device doped with isoele

Details GaAs.sub.1-x P.sub.x electroluminescent device doped with isoele GaAs.sub.1-x P.sub.x electroluminescent device doped with isoele

1977-03-07

1978-11-21

Edlow, Martin H.

357 61, 357 16, H01L 3300

Patent

active

RE0298450

ABSTRACT:
The disclosure herein pertains to the preparation of semiconductor materials and solid-state devices fabricated therefrom. More particularly, the disclosure pertains to a vapor phase process for the preparation of electroluminescent materials, particularly GaAs.sub.1-x P.sub.x, doped with isoelectronic impurities, particularly nitrogen, and to electroluminescent devices fabricated therefrom.

REFERENCES:
patent: 3462320 (1969-08-01), Lynch
patent: 3560275 (1971-02-01), Kressel
patent: 3603833 (1971-09-01), Logan
patent: 3617820 (1971-01-01), Herzog
patent: 3634872 (1972-01-01), Umeda
patent: 3646406 (1972-02-01), Logan
patent: 3687744 (1972-08-01), Ogirama
patent: 3873382 (1975-03-01), Groves
Logan et al., J. Appl. Phys., vol. 42, No. 6, May 1971, pp. 2328-2335.

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