GaAs single crystal with small fluctuation in impurity concentra

Details GaAs single crystal with small fluctuation in impurity concentra GaAs single crystal with small fluctuation in impurity concentra

1984-12-18

1986-09-02

O'Keefe, Veronica

Alloys or metallic compositions

Gallium, indium, or thallium base

148 33, 148400, 148404, 156601, H01L 2700

Patent

active

046095306

ABSTRACT:
A GaAs single crystal containing at least one impurity selected from the group consisting of B, Si, S, Te and In in a concentration of at least 10.sup.15 /cm.sup.3, fluctuation of which is not larger than 20% in a plane perpendicular to a growth direction of the single crystal, which is prepared by pulling up the GaAs single crystal from a GaAs raw material melt contained in a crucible which is encapsulated with a liquid encapsulating layer in an inactive gas atmosphere at a high pressure with applying a magnetic field to the raw material melt.

REFERENCES:
patent: 3496118 (1970-02-01), Willardson et al.
patent: 3630906 (1971-12-01), Willardson, et al.
G. Jacob et al. Isoelectronic Doping of GaAs and InP. J. Crystal Growth, 61, 417-24, 1983.
G. Jacob, Proc. 2nd Int. Conf. Semi. Insulating III-V Compounds, How to Decrease Defect Densities in LEC SI GaAs and InP. Crystal Evian, 1982.
Mil'vidsky, J. Crystal Growth 52, 396-403, 1981.
Mil'Vidsky, "Effect of Doping on Formation of Dislocation Structure in Semiconductor Crystals", Journal of Crystal Growth 52 (1981), 396-403.
G. Jacob, "Dislocation-Free GaAs and InP Crystals by Isoelectronic Doping" Journal of Crystal Growth 61 (1983) 417-424.

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