GaAs single crystal as well as method of producing the same, and

Details GaAs single crystal as well as method of producing the same, and GaAs single crystal as well as method of producing the same, and

1995-06-01

1998-06-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257289, H01L 2920, H01L 29812

Patent

active

057708738

ABSTRACT:
By exploiting an intense correlation exhibited between the distribution of lattice distortions in a wafer and the distribution of the threshold voltages of field effect transistors, the distribution of the lattice distortions in the wafer is reduced, thereby to mitigate the distribution of the characteristics of the semiconductor elements in the wafer. The difference between the maximum value and the minimum value of the lattice distortions of a GaAs single crystal at a normal temperature is set to at most 4.times.10.sup.-5, and the density of Si atoms contained in the GaAs single crystal is set to at most 1.times.10.sup.16 cm.sup.-3, whereby the characteristics of semiconductor elements whose parent material (substrate) is the GaAs single crystal can be made uniform.

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Hunter et al., "Carbon in semi-insulating, liquid encapsulated Czochralski GaAs," Applied Physics Letters. vol. 44, No. 1, Jan. 1984, pp. 74-76.
Miyazawa et al., "Dislocations as the Origin of Threshold Voltage Scatterings for GaAs MESFET on LEC-Grown Semi-Insulating GaAs Substrate," IEEE Transactions on Electron Devices, vol. ED-31, No. 8, Aug. 1984, pp. 1057-1061.

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