GAAS semiconductor device

Details GAAS semiconductor device GAAS semiconductor device

1986-07-07

1987-09-22

Edlow, Martin H.

357 67, 357 15, H01L 2348, H01L 2354

Patent

active

046958690

ABSTRACT:
A GaAs semiconductor device, includes a p-type GaAs substrate, an n-type region formed in the surface area of the substrate, an ohmic contact electrode formed in ohmic contact with the n.sup.+ -type region and having a layer of alloy of gold, and an interconnection electrode formed on the ohmic contact electrode and including an upper layer of aluminum and a lower layer of a metal which prevents gold from passing through it. The interconnection electrode is formed such that it covers the top and side surfaces of the ohmic contact electrode.

REFERENCES:
"Ohmic Contact Technique for N-Type GaAs, GaAsP and GaAlAs"-Rideout--IBM Disclosure Bulletin--vol. 16, No. 9, Feb. 1974, pp. 3070-3071.

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