GaAs photoconductive semiconductor switch

Details GaAs photoconductive semiconductor switch GaAs photoconductive semiconductor switch

1996-07-05

1998-09-08

Le, Que

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250214LS, 257444, H01J 4014

Patent

active

058048154

ABSTRACT:
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

REFERENCES:
patent: 4679063 (1987-07-01), White et al.
patent: 5567971 (1996-10-01), Jackson et al.
G. M. Loubriel, M. W. O'Malley, and F. J. Zutavern, Sandia National Laboratories, Albuquerque, New Mexico, Toward Pulsed Power Uses for Photoconductive Semiconductor Switches: Closing Switches, 6.sup.th IEEE Pulsed Power Conference, Arlington, VA, 1987, Jan. 1987.
A. G. Baca, H. P. Hjalmarson, G. M. Loubriel, D. L. McLaughlin, and F. J. Zutavern, Sandia National Labortories, Albuquerque, New Mexico, High Current Density Contacts of GaAs Photoconductive Semiconductor Switches, pp. 84-87, International Pulsed Power Conference, Jan. 1993.
G. M. Loubriel, F. J. Zutavern, M. W. O'Malley, R. R. Gallegos, W. D. Helgeson, H. P. Hjalmarson, A. G. Baca and T. A. Plut, Sandia National Labortories, Albuquerque, New Mexico, High Gain GaAs Switches for Impulse Sources; Measurement of the Speed of Current Filaments, Proceedings of the 21.sup.st Power Modulator Symposium, Jun. 27-30, 1994, Costa Mesa, California.
G. M. Loubriel, F. J. Zutavern, A. G. Baca, H. P. Hjalmarson, W. D. Helgeson, and M. W. O'Malley, High Power Electromagnetics and Compound Semiconductor Technology Departments, Sandia National Laboratories, Albuquerque, New Mexico, Photoconductive Semiconductor Switches for Firing Sets and Electro-Optic Modulators, 10.sup.th IEEE International Pulsed Power Conference, Jul. 10-13, 1995, Albuquerque, New Mexico.

Affiliated with

Also associated with

Rating

GaAs photoconductive semiconductor switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with GaAs photoconductive semiconductor switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaAs photoconductive semiconductor switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1283924