GaAs mosfet

Details GaAs mosfet GaAs mosfet

1976-12-30

1978-10-10

Tupman, W.

Metal treatment

Stock

Ferrous

29571, 29590, 148188, 204 15, 204 42, H01L 2978

Patent

active

041199936

ABSTRACT:
A GaAs mosfet comprises a p-type gallium arsenide single crystal having two grooves formed therein, each groove containing a layer of indium, a layer of dopant overlying the indium and a layer of Al.sub.2 O.sub.3 overlying the dopant, each groove overlying a respective n.sup.+ region of the gallium arsenide, the surface of the gallium arsenide single crystal on each side of each groove comprising native oxide to a depth contiguous to the n.sup.+ regions, and the layers of dopant being in contact with the junctions between the n.sup.+ regions and the native oxides. A flat contact pad covers the native oxide between the grooves and is in contact with the Al.sub.2 O.sub.3 of both grooves, a second contact pad covers the native oxide on the remaining side of one groove and is in contact with the dopant via an electrically ruptured part of the Al.sub.2 O.sub.3 of that one groove, and a third contact pad covers the native oxide on the remaining side of the other groove and is in contact with the dopant via an electrically ruptured part of the Al.sub.2 O.sub.3 of that other groove.

REFERENCES:
patent: 3756924 (1973-09-01), Collins
patent: 3866311 (1975-02-01), Salles
patent: 3929589 (1975-12-01), Ermanis
patent: 3987538 (1976-10-01), Brown

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