GaAs monolithic medium power amplifier

Details GaAs monolithic medium power amplifier GaAs monolithic medium power amplifier

1984-08-27

1987-02-24

Wan, Gene

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330307, 330286, H03F 316

Patent

active

046460284

ABSTRACT:
A single-ended, bandpass, two stage monolithic (integrated) medium power amplifier is disclosed. The first stage of the amplifier includes a field effect transistor (FET) amplifier having a gate width of about 900 microns and the second stage a "split" field effect transistor (FET), i.e. two parallel connected FETs having gate widths of about 600 microns. The amplifiers of both stages have symmetrical biasing circuits providing the option of biasing the power amplifier from either side of the chip. The "split" (1200 micron) FET of the second stage decreases source inductance and reduces the thermal impedance.

REFERENCES:
W. Vavken et al., "High Voltage Operation of Power GaAs FET Amplifier", Proceedings of the 10th European Microwave Conference, Warsaw, Poland, Sep. 8-12, 1980.
D. Hornbuckle, "A 2-6.2 GHz, 300 mW GaAs Mesfet Amplifier", Conference 1978 IEEE MTTS International Microwave Symposium, Ottawa, Can. Jun. 1978.

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