GaAs MESFET logic buffers using enhancement and depletion FETs

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307450, 307475, 307581, H03K 19094

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active

047076224

ABSTRACT:
A logic circuit includes an inverter circuit including a first enhancement type field effect transistor having a gate connected to an input, and a first depletion type transistor having a gate and a source which are directly connected to a drain of the first enhancement type field effect transistor. A source follower circuit including a second enhancement type field effect transistor having a gate is connected to a connecting point of the first enhancement type field effect transistor and the first depletion type field effect transistor. A second depletion type field effect transistor having a gate and a source which are directly connected to each other has a drain which is connected to a source of the second enhancement type field effect transistor. A first power source is connected to the drains of the first depletion type field effect transistor and the second enhancement type field effect transistor and a second power source is connected to the sources of the first enhancement type field effect transistor and the second depletion type field effect transistor. An output is formed at the connecting point of the second enhancement type field effect transistor and the second depletion type field effect type transistor.

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