GaAs level-shift logic interface circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307448, 307450, H03K 1730, H03K 17687

Patent

active

047437820

ABSTRACT:
A very high speed, low power integrated interface circuit using GaAs or InP technology is provided for converting small digital voltage swings to larger swings which are particularly suitable for analog control signals. The preferred embodiments employ solely depletion mode MESFETS and Schottky diodes in Schottky diode field effect logic (SDFL) configurations.

REFERENCES:
patent: 4393315 (1983-07-01), Stickel et al.
patent: 4412336 (1983-10-01), Peltier et al.
patent: 4488064 (1984-12-01), Vance
patent: 4491747 (1985-01-01), Shimizu
patent: 4496856 (1985-01-01), Ransom et al.
Van Tuyl et al, "High-Speed Integrated Logic with GaAs MESFETs", pp. 269-276; IEEE-JSSC, vol.-SC-9, No. 5, 10/1974.

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