GaAs heterostructure metal-insulator-semiconductor integrated ci

Details GaAs heterostructure metal-insulator-semiconductor integrated ci GaAs heterostructure metal-insulator-semiconductor integrated ci

1990-12-31

1992-06-23

Prenty, Mark

357 22, 357 232, H01L 2916, H01L 29205, H01L 2980, H01L 2920

Patent

active

051247623

ABSTRACT:
Heterostructure metal insulator semiconductor integrated circuit technology resulting in, for instance, GaAs field-effect-transistors having much less gate current leakage and greater voltage range than like technology of the related art.

REFERENCES:
patent: 4806998 (1989-02-01), Vinter et al.
patent: 4807001 (1989-02-01), Hida
patent: 5036374 (1991-07-01), Shimbo
Akinwande et al.: "A 500-MHz 16X16 Complex Multiplier Using Self-Alligned GaAs Heterostructure FET Technology" dated Oct. 1989 published in IEE Journal of Solid State Circuits, vol. 24, No. 5.

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