1977-05-02
1979-08-07
Edlow, Martin H.
357 16, 357 63, H01L 2714
Patent
active
041639871
ABSTRACT:
The specification describes an improved III-V compound solar cell structure and fabrication process therefor wherein a P-type layer of gallium aluminum arsenide is epitaxially grown on an N-type gallium arsenide substrate to form a P-type region and a PN junction in the substrate. Controlled amounts of beryllium are introduced into both the epitaxial layer and the substrate, either during epitaxial growth or by using beryllium ion implantation techniques subsequent to the P-type epitaxial growth step. The homojunction-heterostructure device thus formed exhibits improved power conversion efficiencies in excess of 17%.
REFERENCES:
patent: 3931631 (1976-01-01), Groves et al.
Hovel et al., I.B.M. Tech. Discl. Bull., vol. 15, No. 12, May 1973, p. 3741.
Ewan et al., Conf. 11th IEEE Photospecialist May 6-8, 1975, pp. 409-413.
James et al., Appl. Phys. Lett., vol. 26, No. 8, Apr. 15, 1975, pp. 467-470.
Anderson Carl L.
Kamath G. Sanjiv
Bethurum William J.
Edlow Martin H.
Hughes Aircraft Company
MacAllister William H.
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