Patent
1981-11-02
1986-02-25
Carroll, James J.
357 15, 357 34, 357 46, 357 51, 357 65, 357 68, 357 88, 357 91, 357 92, H01L 2948, H01L 29161, H01L 2702, H01L 2348
Patent
active
045730644
ABSTRACT:
Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This integrated circuit device is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The use of an ion implant technique avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with ion implantation, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.
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Doerbeck Friedrich H.
Duncan Walter M.
McLevige William V.
Yuan Han-Tzong
Carroll James J.
Comfort James T.
Hiller William E.
Sharp Melvin
Texas Instruments Incorporated
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