GaAs Field effect transistor with a non-volatile memory

Details GaAs Field effect transistor with a non-volatile memory GaAs Field effect transistor with a non-volatile memory

1981-08-19

1984-05-22

Edlow, Martin H.

357 4, 357 16, 357 58, 357 61, H01L 2978, H01L 29161, H01L 2712

Patent

active

044504624

ABSTRACT:
The invention relates to field effect transistors having a non-volatile memory effect of the MIS type. According to the invention the transistor comprises, in addition to substrate (17), a source (21), a drain (22), a grid formed by a semi-insulating film (18) and an insulating layer (19), whose semi-insulating film (18) has a thickness below 100 angstroms and is formed from a semiconductive material of groups III-V having a broader forbidden band than that of the active layer (16) on which it is deposited. Useful applications of the invention include ultra-high frequency transistors for telecommunications.

REFERENCES:
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4160261 (1979-07-01), Casey, Jr. et al.
patent: 4320410 (1982-03-01), Nishizawa et al.
T. Kawakami et al., "n-Channel Formation on Semi-Insulating InP Surface by M.I.S.F.E.T.", Electronics Letters, vol. 16, (1979), p. 743.
H. Morkoc et al., "Normally-Off Al.sub.0.5 Ga.sub.0.5 As Heterojunction-Gate GaAs F.E.T.", Electronics Letters, vol. 13, (1977), pp. 747-748.

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