Patent
1989-12-05
1991-09-17
Hille, Rolf
357 22, 357 71, H01L 2948, H01L 2956
Patent
active
050499548
ABSTRACT:
A Schottky gate electrode structure of a GaAs field effect semiconductor device comprises a Ti film having a thickness of 2 nm to 25 nm and provided adherently on a GaAs substrate including source and drain regions, and a refractory electrode film provided on the Ti film and formed of a material selected from W, Mo, Cr, Ta, Nb, V, Hf, Zr, nitrides of these metals, silicides of these metals, carbides of these metals, Ti-W alloys, WSixNy, TiNx, and TiSix. Adhesion of the refractory electrode film to the GaAs substrate is increased, and heat resisting properties of Schottky characteristics are improved according to the thin Ti film.
REFERENCES:
patent: 4574298 (1986-03-01), Yamagishi et al.
C. Canali et al., "Gate Metallization `Sinking` into the Active Channel in Ti/W/Au Metallized Power MESFET's," IEEE Election Device Letters, vol. EDL-7, No. 3, Mar. 1986.
H. Matsuura et al., "Thermally Stable Schottky Contact to n-GaAs Using W-Al Alloy and Al/W Two Layer Metal," Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 379-382.
Y. Kuriyama et al., Shingaku Technical Report, ED 86-49, "Effect of Si Thin Interfacial Layer on W/GaAs Schottky Barrier Contact".
Akiyama Tatsuo
Koshino Yutaka
Shimada Kizashi
Hille Rolf
Kabushiki Kaisha Toshiba
Tran Minhloan
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