Oscillators – Solid state active element oscillator – Transistors
Patent
1984-12-24
1986-12-02
LaRoche, Eugene R.
Oscillators
Solid state active element oscillator
Transistors
331116FE, 331109, 331183, H03B 500
Patent
active
046268022
ABSTRACT:
A method and means for reducing noise in a GaAs FET oscillator circuit is described. The circuit of the present invention achieves low noise oscillator operation by driving the gate input of the GaAs FET oscillator circuit with a source of voltage which exhibits a low impedance at baseband frequencies and driving the drain input with a source of current which exhibits a high impedance at said frequencies. The present invention further operates to control the D.C. voltage present on the drain terminal of the GaAs FET device regardless of the drain current, while simultaneously maintaining a constant D.C. drain current at some predetermined value which corresponds to optimum low-noise operation.
REFERENCES:
patent: 3878481 (1975-04-01), Healey, III
patent: 3993963 (1976-11-01), Logan et al.
patent: 4047126 (1977-09-01), Anderson
patent: 4135168 (1979-01-01), Wade
patent: 4208639 (1980-06-01), Stickel
patent: 4454485 (1984-06-01), Fisher
Siweris, et al., "Analysis of Noise Up-Conversion in Microwave FET Oscillators", IEEE-MTT vol. 33, #3, Mar. 1985, pp. 233-241.
Riddle, et al., "A New Method of Reducing Phase Noise in GaAs FET Oscillators", IEEE-MTT-S Int. Microwave Symp. Dig., 1984, pp. 274-276.
Jacobson, Jr. James E.
LaRoche Eugene R.
Motorola Inc.
Pascal Robert J.
Roney Edward M.
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