GaAs device fabrication utilizing metalorganic molecular beam ep

Details GaAs device fabrication utilizing metalorganic molecular beam ep GaAs device fabrication utilizing metalorganic molecular beam ep

1991-02-28

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437104, 437105, 437107, 437112, 148DIG110, H01L 2120, H01L 2136

Patent

active

051717042

ABSTRACT:
High carrier concentration, as well as abrupt change in such concentration in GaAs-based devices, is the consequence of selection of tin dopant-containing precursor compounds as used during layer growth. Alkyl tin compounds, as used during MetalOrganic Molecular Beam Epitaxy, are of particular value in the growth of pnp heterojunction bipolar transistors, likely in conjunction with other devices in large scale integrated circuits.

REFERENCES:
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patent: 5010382 (1991-04-01), Katoh
patent: 5023687 (1991-06-01), Tanoue et al.
Panish et al., "Very high tin doping of Ga.sub.0.47 In.sub.0.53 As by Molecular Beam Epitaxy", Appl. Phys. Lett. 56(12); Mar. 1990; pp. 1137-1139.
Cho; "Impurity Profiles of GaAs Epitaxial Layers doped with Sn, Si, and Ge Grown with Molecular Beam Epitaxy"; J. Appl. Phys., vol. 46, No. 4, Apr. 1975; pp. 1732-1735.
Kawaguchi et al., "Sn Doping for InP and InGaAs Grown by Metalorganic Molecular Beam Epitaxy Using Tetraethyltin"; Journal of Crystal Growth 95 (1989) 181-184.
Chemtronics, G. J. Davies et al., vol. 3, p. 3 (1988).
J. Electron. Mater., W. T. Tsang, p. 235 (1986).
App. Phys. Let., vol. 55, No. 17, pp. 1750-1752 (Oct. 23, 1989).

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