Coherent light generators – Particular active media – Semiconductor
Patent
1989-09-18
1991-01-08
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
357 4, 357 16, 357 17, H01S 319, H01L 3300
Patent
active
049842420
ABSTRACT:
GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance.
REFERENCES:
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4611328 (1986-09-01), Liu et al.
patent: 4661961 (1987-04-01), Nelson et al.
patent: 4712219 (1987-12-01), Yano et al.
patent: 4737960 (1988-04-01), Tsang
patent: 4740977 (1988-04-01), Ikeda
patent: 4769821 (1988-09-01), Gotoh
patent: 4860297 (1989-08-01), Hayakawa et al.
W. T. Tsang, "Extension of Lasing Wavelengths . . .", Appl. Phys. Lett.,38 (9), May 1, 1981, pp. 661-663.
G. C. Osbourn, "Strained-Layer Superlattices: A Brief Review", IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, Sep. 1986, pp. 1677-1681.
S. E. Fischer et al., "Long-Lived InGaAs Quantum Well Lasers", Appl. Phys. Lett. 54 (19), May 8, 1989, pp. 1861-1862.
W. Walukiewicz, "Dislocation Density Reduction . . .", Appl. Phys. Lett. 54 (20), May 15, 1989, pp. 2009-2011.
Endriz John
Scifres Donald R.
Streifer William
Welch David F.
Epps Georgia
Protsik Mark
Schneck Thomas
Spectra Diode Laboratories, Inc.
LandOfFree
GaAs/AlGaAs heterostructure laser containing indium does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with GaAs/AlGaAs heterostructure laser containing indium, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaAs/AlGaAs heterostructure laser containing indium will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-941291