Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y /InP Avalanche photodiode

Details Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y /InP Avalanche photodiode Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y /InP Avalanche photodiode

1979-04-09

1981-03-24

Edlow, Martin H.

357 13, 357 30, 357 52, H01L 29161

Patent

active

042583756

ABSTRACT:
An improved avalanche photodiode having an active layer of Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y containing a p-n junction and a window layer grown epitaxially to an n.sup.+ substrate is disclosed herein, as well as methods for its fabrication.

REFERENCES:
patent: 3622844 (1971-11-01), Barelli
patent: 3821777 (1974-06-01), James
patent: 3982261 (1976-09-01), Antypar
Hurwitz et al., "Topical Meetin on Integrated and Guided Wave Optics" Digest of Technical Papers, Jan. 10-18, 1977, pp. mc1-1,2, and 3.
Hurwitz et al., "GaInAsP/InP Avalanche Photodiode", full paper presented at Topical Meeting, Jan. 1977, Salt Lake City, UT.
Hurwitz et al., Appl. Phys. Lett., 32(8), Apr. 15, 1978, pp. 487-489.
Ito et al., Electronics Letters, 14, pp. 418-419, Jul. 6, 1978.
Lee et al., IEEE J. Quantum Electronics, vol. qe-15, No. 1, Jan. 1979, pp. 30-35.
Takanashi, et al., Jap. J. Appl. Phys., 17(1978), No. 11, pp. 2065-2066.
Weider et al., Appl. Phys. Lett., 31, No. 7, Oct. 1, 1977, pp. 468-470.
Clawson et al., Appl. Phys. Letts., 32(9), May 1, 1978, pp. 549-551.

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