Fusion bonding technique for use in fabricating semiconductor de

Details Fusion bonding technique for use in fabricating semiconductor de Fusion bonding technique for use in fabricating semiconductor de

1993-05-07

1994-02-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437901, 148DIG12, H01L 21306

Patent

active

052866718

ABSTRACT:
A method of bonding a first silicon wafer to a second silicon wafer comprises the steps of diffusing a high conductivity pattern into a surface of a first semiconductor wafer, etching a portion of the surface to raise at least a portion of the pattern, providing a second semiconductor wafer having an insulating layer of a silicon compound disposed thereon, contacting the surface of the pattern to the insulating layer, and bonding the first and second semiconductor wafers at an elevated temperature.

REFERENCES:
patent: 3924322 (1975-12-01), Kurtz et al.
patent: 4498229 (1985-02-01), Wilner
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 5238865 (1993-08-01), Eguchi

Affiliated with

Also associated with

Rating

Fusion bonding technique for use in fabricating semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fusion bonding technique for use in fabricating semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fusion bonding technique for use in fabricating semiconductor de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1206673