Fusible link structure for semiconductor devices

Details Fusible link structure for semiconductor devices Fusible link structure for semiconductor devices

1997-10-22

2000-02-15

Niebling, John F.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438467, H01L 2182

Patent

active

060252146

ABSTRACT:
An improved laser fusible link structure for semiconductor devices (200) and method of manufacturing thereof (10) is disclosed. A first conductive layer is patterned to create a laser fuse (202) and then covered with a first dielectric layer (212). An etch mask layer, in the preferred embodiment a second layer of polysilicon, is deposited and patterned to form a fuse etch mask (214) directly over the laser fuse (202). The fuse etch mask (214) has a width that is smaller than a minimum laser spot size, but large enough to protect the laser fuse (202) from fuse window over-etch, taking into account any potential misalignment between the laser fuse (202) and the fuse etch mask (214).

REFERENCES:
patent: 4476375 (1984-10-01), Ogawa
patent: 4628590 (1986-12-01), Udo et al.
patent: 4912066 (1990-03-01), Wills
patent: 5235205 (1993-08-01), Lippitt, III
patent: 5585662 (1996-12-01), Ogawa
patent: 5821160 (1998-10-01), Rodrigues et al.

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