Fusible link structure for integrated circuits

Details Fusible link structure for integrated circuits Fusible link structure for integrated circuits

1986-04-15

1989-01-03

Carroll, J.

357 54, 357 67, 357 71, H01L 2702, H01L 2934, H01L 2348

Patent

active

047960752

ABSTRACT:
A fusible link structure and method of making the same for use in integrated circuit structures is provided in which the fusible link comprises, in one embodiment, an alloy of platinum and silicon. The preferred alloy comprises the eutectic mixture having approximately 23 atomic percent silicon. Electrical connections to the fusible link are preferably provided by a layer of aluminum on a layer of material, preferably an alloy of titanium and tungsten wherein the titanium and tungsten alloy is disposed between the fusible link and the aluminum layer, and serves as a diffusion barrier for preventing diffusion of the aluminum into the fusible link. In a preferred embodiment, a fusible link is deposited on a relatively thick dielectric layer, preferably more than 10,000 .ANG. thick, having a relatively low thermal conductivity. The preferred method of depositing the fusible link is sputtering from a target comprising the platinum-silicide alloy, thus achieving a fuse element having uniform composition throughout its cross section. A fuse of this type has high reliability, requires low fusing current, and is dielectrically encapsulated sealed within the integrated circuit structure.

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S. P. Murarka, "Refractory Silicides for Integrated Circuits," Journal of Vacuum Science and Technology, vol. 17 (1980), pp. 775-792.

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