Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...
Reexamination Certificate
2000-04-14
2001-10-16
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Contacts or leads including fusible link means or noise...
C257S529000
Reexamination Certificate
active
06303980
ABSTRACT:
BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
The invention relates to a fusible link in an integrated semiconductor circuit, in which a conductor track has a cross-sectional constriction as a desired fusing point. The invention also relates to a process for producing a fusible link in an integrated circuit.
Integrated semiconductor circuits frequently have fusible links, which are used to introduce information into an already finished integrated circuit. This is carried out in such a way that the fusible link is either ignited or not ignited. In other words, a conductor track is either interrupted or not interrupted. Fusible links are used, for instance, to secure personal data in chip cards, to personalize standard components in motor vehicles, to set precise resistances or resistance ratios in analog circuits, and as a memory element in a PROM or for increasing the yield in memory components by cutting off defective memory cells.
Typically, a fusible link includes a conductor track that has a constriction of its cross section at the desired fusing point. That constricted cross section typically has a vertical extent of 0.1 to 1 &mgr;m and a horizontal length of 0.5 to 3 &mgr;m. The fusible link is embedded in one or more insulating layers, preferably silicon dioxide, depending on the layer sequence of the semiconductor component.
The interruption of the conductor track is carried out through the use of a current pulse that leads to melting open of the fuse and an insulation layer surrounding it. In a typical fuse made of polysilicon, approximately 20 mA at 12 V for a period of 5 to 10 &mgr;sec are required to achieve complete severing. Only about 1 to 10% of this ignition energy is needed for melting open the constricted conductor track itself. In other words, by far the majority of the ignition energy is dissipated to the surrounding insulation layers. A problem of fuses that are interrupted in this way is the danger of revitalization. In other words, the original conductivity may be partly reestablished as a result of the effects of temperature and voltage. Upon ignition, an approximately spherical region with a diameter of a few micrometers (typically 2 to 3 &mgr;m) melts open. That causes the destruction of the surrounding layers, and especially of the passivation layer above. As a result, contaminants such as alkali ions can penetrate more easily and can impair the reliability of the components of the integrated circuit.
Fusible links are also used as a memory element in PROM memory components. In them, a memory cell includes one fusible link and one diode. Since the performance on melt-through is very high and the attained reliability is low, such memories are alternatively made with so-called floating gate or SONOS structures. The Fowler-Nordheim tunneling effect or hot electron injection is used for programming. A disadvantage of the Fowler-Nordheim tunneling effect is the requisite high programming voltages of about 15 V. The writing times are about 10 &mgr;sec to 1 msec. In programming by hot electron injection, relatively high currents of a few milliamps are necessary, and writing times are about 10 &mgr;sec.
SUMMARY OF THE INVENTION
It is accordingly an object of the invention to provide a fusible link in an integrated semiconductor circuit and a process for producing the fusible link, which overcome the hereinafore-mentioned disadvantages of the heretofore-known devices and methods of this general type and in which the fusible link has improved reliability and does not impair reliability of the integrated circuit.
With the foregoing and other objects in view there is provided, in accordance with the invention, a fusible link in an integrated semiconductor circuit, comprising a void; and a conductor track having a cross-sectional constriction as a desired fusing point, the desired fusing point having at least one surface in the void.
In the invention, the desired fusing point of the fusible link is accommodated in a void. Therefore, only the constricted conductor track but no surrounding insulation layer needs to be melted open. Accordingly, only about 1 to 10% of the usual ignition energy is needed. This reduces the space requirement for the ignition transistors. The yield in the ignition operation is also improved. The danger of revitalization is averted. Since the melting process is limited to the conductor track, protection layers disposed above it in the integrated circuit, such as getter and barrier layers, are not destroyed, and therefore the reliability of the other components is not reduced.
However, in such a fusible link the danger can exist that harmful substances such as moisture will penetrate the void. Undesired reactions can occur at the walls of the void on which conductive structures may also be exposed, and on the fusible link itself, that impair the operability and reliability of the fusible link or of the circuit.
Therefore, in accordance with another feature of the invention, the fusible link and/or the void is covered with a protection layer, in order to prevent reactions, especially corrosion, at the bare surfaces of the conductor track and/or of the void. Suitable protection layers are, for instance, silicon oxide, silicon nitride, or a double layer of these materials. The layer may be applied by a known production process, such as PECVD. The layer thickness should be selected in accordance with requirements and is preferably in the range from 100 to 1000 nm.
In accordance with a further feature of the invention, the fusible link may be used as a memory element, by being connected in series with a diode or a drain of a selection transistor. A substantial advantage is that neither high current nor high voltage is necessary for programming. If the cross section of the desired fusing point is 0.4×0.7 &mgr;m
2
for a polysilicon track, for instance, then the fuse current is about 5 mA at a voltage of about 4 V. These values can be reduced further by choosing smaller cross sections. The programming time for such a cell is less than 1 &mgr;sec. A further advantage is that the stored data are secure, since erasure and rewriting in principle is no longer possible. The data cannot be altered by radiation or temperature storage, either. With the objects of the invention in view there is also provided a process for producing a fusible link in an integrated circuit, which comprises producing a first layer on a semiconductor substrate; embedding a conductor track in the first layer; producing a cross-sectional constriction as a desired fusing point in the conductor track; producing a second layer on the first layer; producing an opening in the second layer in the vicinity of the desired fusing point; and creating a void in the first layer around the desired fusing point with an etching process.
With the objects of the invention in view there is additionally provided a process for producing a fusible link in an integrated circuit, which comprises producing a first layer on a semiconductor substrate; producing a second layer on the first layer, the second layer including a conductor track with a cross-sectional constriction as a desired fusing point and openings adjacent the desired fusing point; and creating a void in the first layer beneath the desired fusing point.
Other features which are considered as characteristic for the invention are set forth in the appended claims.
Although the invention is illustrated and described herein as embodied in a fusible link in an integrated semiconductor circuit and a process for producing the fusible link, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying dra
Muller Karlheinz
Pohle Holger
Werner Wolfgang
Abraham Fetsum
Greenberg Laurence A.
Infineon - Technologies AG
Lerner Herbert L.
Stemer Werner H.
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