Fused quartz member for use in semiconductor manufacture

Details Fused quartz member for use in semiconductor manufacture Fused quartz member for use in semiconductor manufacture

1990-06-07

1994-05-03

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

G30B 1510

Patent

active

053084462

ABSTRACT:
A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.

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patent: 4478676 (1984-10-01), Belt et al.
patent: 4515755 (1985-05-01), Matsuo et al.
patent: 4528163 (1985-07-01), Albrecht

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