Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-08-14
1999-02-16
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257637, 257638, 257665, H01L 2900
Patent
active
058723900
ABSTRACT:
A fuse window structure and method for forming the same for a semiconductor device with a fuse and a cutting site on the fuse, the structure having (1) a first oxide region substantially in register with the cutting site, the first oxide region having a first thickness, (2) a second oxide region substantially in register with a first land generally surrounding the cutting site, the first land generally in register with the fuse, the second region having a second thickness, and (3) a third oxide region substantially in register with a second land generally surrounding the fuse, the third region having a third thickness different than the first thickness. Different fuse window structures are formed by using etch stops with different configurations, each configuration differing with regard to coverage of the three oxide regions.
REFERENCES:
patent: 4536949 (1985-08-01), Takayama et al.
patent: 4628590 (1986-12-01), Udo et al.
patent: 5025300 (1991-06-01), Billig et al.
patent: 5126283 (1992-06-01), Pintchovski et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5303199 (1994-04-01), Ishihara et al.
patent: 5329152 (1994-07-01), Janai et al.
patent: 5374832 (1994-12-01), Tung et al.
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5578861 (1996-11-01), Kinoshita et al.
"Process and Structure for Laser Fuse Blowing", IBM Technical Disclosure Bulletin, vol. 31, No. 12 (May 1989) p. 93.
Klaasen William Alan
Lee Pei-Ing Paul
Mitwalsky Alexander
Carroll J.
International Business Machines - Corporation
Mortinger Alison D.
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