Fuse-triggered antifuse

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections

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Details

257529, 257665, 257530, H01L 2362, H01L 2358

Patent

active

055720501

ABSTRACT:
A programmable integrated circuit for forming conductive links includes a heat-generating programming structure through which current flows upon application of a programming voltage to heat the region around the programming structure. A programmable link structure including two conductors separated by a transformable insulator is in thermal communication with the programming circuit. When current flows through the programming circuit, the programmable link structure is heated. The heat causes the transformable insulator to break down such that a permanent conductive link is formed between the two conductors of the programmable link structure. During programming, a programming conductor is cut symmetrically about the programming structure.

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Cohen, Simon, S., et al., "A Novel Double-Metal Structure for Voltage-Programmable Links," IEEE Electron Device Letters, 13 (9):488-490, (Sep. 1992).
Cohen, Simon S., et al., "A Novel Metal.varies.Insulator-Metal Structure for Field-Programmable Devices," IEEE Transactions on Electron Devices, 40(7):1277-1283, (Jul. 1993).
Joseph L. Fabula, RCA Technical Notes, "Technical Notes Number 976: Semiconductor Fuse," Princeton, New Jersey, (Sep. 17, 1974).

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