Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-03-20
2007-03-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S355000, C257S544000, C257SE23149
Reexamination Certificate
active
11001056
ABSTRACT:
A fuse structure for memory cell repair in a RAM device. The fuse structure includes a substrate, a fuse layer over an isolation region on the substrate, a charge protection circuit electrically connected to one side of the fuse layer, and two conductive layers overlying the substrate and electrically connected to the charge protection circuit and the other side of the fuse layer respectively.
REFERENCES:
patent: 4636825 (1987-01-01), Baynes
patent: 6667537 (2003-12-01), Koike et al.
patent: 6933591 (2005-08-01), Sidhu et al.
patent: 2003/0122200 (2003-07-01), Kamiya et al.
Birch & Stewart Kolasch & Birch, LLP
Ho Tu-Tu
Taiwan Semiconductor Manufacturing Co. Ltd
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