Fuse structure used in an integrated circuit device

Details Fuse structure used in an integrated circuit device Fuse structure used in an integrated circuit device

2006-04-25

2006-04-25

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S209000, C337S290000, C337S293000, C337S295000, C438S281000

Reexamination Certificate

active

07034378

ABSTRACT:
A novel fuse structure. An optimal position of laser spot is defined above a substrate. A first conductive layer is formed on part of the substrate. A dielectric layer is formed on the substrate and the first conductive layer. A second conductive layer comprising the position of laser spot is formed on part of the dielectric layer. A third conductive layer is formed on the part of the dielectric layer placed above the first conductive layer, wherein the third conductive layer is insulated from the first and second conductive layers. At least one conductive plug penetrates the dielectric layer, to electrically connect the first conductive layer and the second conductive layer. Thus, the third conductive layer serves as a floating layer to prevent the first conductive layer from being damaged in the laser blow process.

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