Fuse structure for semiconductor integrated circuit with...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE23149

Reexamination Certificate

active

11037166

ABSTRACT:
When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient due to the insufficient intensity of a laser or disconnection of even an adjacent fuse due to excessive laser irradiation might occur. Further, a problem also occurred that after disconnection of the fuse, moisture entered from exterior through the region in which the fuse has been disconnected, so that the quality of a film underlying the fuse was adversely affected. After a SiON film, a SiN film, and a SiO2film have been formed to cover the fuse in this stated order, etching is performed to the SiN film, which is an etching stopper film. The SiON film having a uniform and desired film thickness is thereby formed on the fuse.

REFERENCES:
patent: 6100116 (2000-08-01), Lee et al.
patent: 6300232 (2001-10-01), Satoh
patent: 6518643 (2003-02-01), McDevitt et al.
patent: 6756620 (2004-06-01), Isenberger et al.
patent: 6835999 (2004-12-01), Omura et al.
K. Arndt et al., Reliability of Laser Activated Metal Fuses in DRAMS, 1999 IEEE/CPMT Int'l Electronics Manufacturing Technology Symposium, p. 389-394.

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