Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-03-13
2007-03-13
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23149, C257SE21592
Reexamination Certificate
active
11162150
ABSTRACT:
A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and bottom insulating layers. The fuse layer is connected to the other metal layers through via plugs. The fuse layer includes separate blocks and at least a connecting block and is coupled to at least a heat buffer block of a different layer. Because the heat buffer block is coupled to the blocks of the fuse layer, new fusing point and a new path for effectively dissipating the heat are provided and a longer and sinuous electric current path is obtained between the blocks through the heat buffer blocks. The heat buffer block and the blocks coupled to the heat buffer block can avoid large current flowing through the fuse structure and prevent overheating.
REFERENCES:
patent: 2005/0258504 (2005-11-01), Cheng et al.
patent: 2006/0022300 (2006-02-01), Wu et al.
Cheng Chun-Wen
Hsueh Sheng-Yuan
Lee Ruey-Chyr
Liang Chia-Wen
Jianq Chyun IP Office
Ngo Ngan V.
United Microelectronics Corp.
LandOfFree
Fuse structure for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fuse structure for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fuse structure for a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3802810