Fuse structure

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S530000, C257S762000, C257SE21592, C257SE23147, C438S131000, C438S132000

Reexamination Certificate

active

10711790

ABSTRACT:
A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one second conductor on the first dielectric layer. The second conductor has at least one thin portion.

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patent: 6707129 (2004-03-01), Wang
patent: 6828653 (2004-12-01), Castagnetti et al.
patent: 6900515 (2005-05-01), Fischer et al.
patent: 2005/0110148 (2005-05-01), Lee et al.

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