Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2011-07-05
2011-07-05
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S211000, C257SE21592, C438S128000, C438S132000
Reexamination Certificate
active
07973341
ABSTRACT:
A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse blowing process, thereby improving repair efficiency.
REFERENCES:
patent: RE36644 (2000-04-01), Dennison
patent: 6444544 (2002-09-01), Hu et al.
patent: 7186593 (2007-03-01), Kim
patent: 2004/0262768 (2004-12-01), Cho et al.
patent: 2007/0172995 (2007-07-01), Choi
patent: 07-078872 (1995-03-01), None
patent: 1020000077334 (2000-12-01), None
patent: 10-0871389 (2008-12-01), None
Park Hyung Jin
Shin Won Ho
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Novacek Christy L
Smith Zandra
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