Fuse of a semiconductor memory device and repair process for...

Details Fuse of a semiconductor memory device and repair process for... Fuse of a semiconductor memory device and repair process for...

2011-07-12

2011-07-12

Warren, Matthew E (Department: 2815)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S215000, C438S601000, C257S209000, C257SE23149, C257SE23150

Reexamination Certificate

active

07977164

ABSTRACT:
Disclosed herein is a fuse of a semiconductor memory device and a repair process for the same. The fuse includes a lower conductive film of a multilayer interconnection formed on a lower structure of a semiconductor substrate, an upper conductive film of the multilayer interconnection spaced apart upward from the lower conductive film to define a predetermined vertical space therebetween, and a contact electrode, which vertically connects the upper and lower conductive films to each other and forms a fuse body. The lower conductive film includes a form not coinciding with that of the upper conductive film. With such a configuration, the device can achieve a stable minimization in the length of the fuse and the distance between adjacent fuses in consideration of a laser beam irradiation region for the high integration of the semiconductor memory device. In this way, the device performs the repair process of cutting the contact electrode and/or upper conductive film using a laser beam.

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