Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-04-12
2005-04-12
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000
Reexamination Certificate
active
06879018
ABSTRACT:
A metal silicide fuse for a semiconductor device. The fuse includes a conductive region positioned adjacent a common well of a first conductivity type, a terminal region positioned adjacent a well of a second conductivity type, and a narrowed region located between the terminal region and the conductive region and positioned adjacent a boundary between the two wells. Upon applying at least a programming current to the fuse, the fuse “blows” at the narrowed region. The diode or diodes between wells of different conductivity types wells and the Schottky diode or diodes between the remaining portions of the fuse and wells adjacent thereto control the flow of current through the remainder of the fuse and through the associated wells of the semiconductor device. When the fuse has been “blown,” the diodes and Schottky diodes prevent current of a normal operating voltage from flowing through the wells of the semiconductor device.
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Gail Robinson,PROM Fuse Design Scales to Sub-0.25 Micron, Sep. 29, 1997, Electronic Engineering Times, p. 44.
Marr Kenneth W.
Violette Michael P.
Tran Minh-Loan
TraskBritt
LandOfFree
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