Fuse-containing semiconductor device

Details Fuse-containing semiconductor device Fuse-containing semiconductor device

1989-01-27

1990-03-13

Carroll, J.

357 55, 357 67, 357 71, H01L 2906, H01L 2702, H01L 2348

Patent

active

049086928

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an insulating layer formed on the substrate, and a fuse deposited on the insulating layer so as to be interposed between two wiring layers. The fuse is prepared from high melting point metal silicide.

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S. P. Murarka, "Refractory Silicides for Integrated Circuits", Journal of Vacuum Science and Technology, vol. 17 (1980), pp. 775-792.
F. Mohammadi, "Silicides for Interconnection Technology", Solid State Technology (Jan. 1981), pp. 65-71.

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