Fuse circuit and semiconductor device including the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S536000, C257S537000, C257S773000, C337S159000, C337S297000

Reexamination Certificate

active

07429780

ABSTRACT:
A semiconductor device includes a fuse circuit, which includes a first conductive region and a second conductive region. The first conductive region has a multi-layered structure, and the second conductive region has a less layered structure than the first conductive region.

REFERENCES:
patent: 4331947 (1982-05-01), Noerholm
patent: 5726621 (1998-03-01), Whitney et al.
patent: 6853050 (2005-02-01), Kim
patent: 2002/0060352 (2002-05-01), Mizuno
patent: 2002/0079552 (2002-06-01), Koike
patent: 2003/0038338 (2003-02-01), Fournel et al.
patent: 2004/0038458 (2004-02-01), Marr
patent: 2004/0046231 (2004-03-01), Okada
patent: 05-021604 (1993-01-01), None
patent: 2001-298093 (2001-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fuse circuit and semiconductor device including the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fuse circuit and semiconductor device including the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fuse circuit and semiconductor device including the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3991511

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.