Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-06-24
1997-08-26
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257379, H01L 2900
Patent
active
056613318
ABSTRACT:
A fuse bank includes a fuse link being disposed above and insulated from a substrate. A first doped region in the substrate is a guard ring surrounding the fuse link. A second doped region has the same conduction type as the first doped region and is adjacent the first doped region. An insulation separates the second doped region from the first doped region. A high-impedance semiconductor component connects the first doped region to a first supply potential. The second doped region is connected to a second supply potential.
REFERENCES:
patent: 4723155 (1988-02-01), Uchida
Patent Abstracts of Japan, vol. 9, No. 248 (E-347), Oct. 4, 1985: and JP-A-60-098664 (Mitsubishi) Jun. 1, 1985.
Patent Abstracts of Japan, vol. 14, No. 55 (E-882), Jan. 31, 1990; and JP-A-12-78745 (Matsushita) Nov. 9, 1989.
Patent Abstracts of Japan, vol. 18, No. 359 (E-1574) Jul. 6, 1994; and JP-A-60-97379 (Yamaha) Apr. 8, 1994.
Hebbeker Heinz
Reczek Werner
Savignac Dominique
Terletzki Hartmud
Greenberg Laurence A.
Lerner Herbert L.
Prenty Mark V.
Siemens Aktiengesellschaft
LandOfFree
Fuse bank does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fuse bank, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fuse bank will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1990215