Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1992-01-08
1993-08-03
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 29 2501, C23C 1600
Patent
active
052325067
ABSTRACT:
A furnace structure of a semiconductor manufacturing apparatus includes a process chamber, a pair of preliminary chambers, and shutters. The process chamber has a pair of openings in loading and unloading directions of a semiconductor substrate and is designed to perform a predetermined semiconductor manufacturing process. Each of preliminary chambers has a pair of openings and communicate with the process chamber, with one of each pair of openings opposing a corresponding one of the openings of the process chamber. The shutters are respectively arranged between the two openings of the process chamber and the opposing openings of the pair of preliminary chambers and designed to separate the process chamber from the preliminary chambers so as to be opened/closed.
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IBM Tech. Disc. Bull., vol. 32, No. 3B, Aug. 1989, pp. 302-303.
Webster's New Collegiate Dictionary, .COPYRGT.1975, G. & C. Merriam Co., Springfield, Mass., p. 1076.
Bueker Richard
NEC Corporation
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