Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2007-12-11
2007-12-11
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S071000, C117S077000, C117S078000, C117S082000, C117S003000, C117S004000, C117S940000
Reexamination Certificate
active
10971315
ABSTRACT:
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
REFERENCES:
patent: 6238479 (2001-05-01), Oba
patent: 6270570 (2001-08-01), Ohba et al.
patent: 6333922 (2001-12-01), Campanella
patent: 6395657 (2002-05-01), Mayolet et al.
patent: 6562126 (2003-05-01), Price
patent: 6630117 (2003-10-01), Sparrow
patent: 2003/0019422 (2003-01-01), Herve
patent: 2003/0070606 (2003-04-01), LeBlond et al.
Fredholm Michelle M. L.
Kohli Jeffrey T.
LeBlond Nicholas
Mayolet Alexandre M.
Pshenitsyna Viktoria
Corning Incorporated
Douglas Walter M.
Gupta Yogendra N.
Song Matthew J.
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