Furnace for growing compound semiconductor single crystal...

Details Furnace for growing compound semiconductor single crystal... Furnace for growing compound semiconductor single crystal...

2008-01-01

2008-01-01

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S083000

Reexamination Certificate

active

11033986

ABSTRACT:
A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter section that extends from the increasing diameter section to upward. The increasing diameter section has an angle of 120 degrees or more and less than 160 degrees between inner walls opposed to each other.

REFERENCES:
patent: 6334897 (2002-01-01), Asahi et al.
patent: 5-194073 (1993-08-01), None
patent: 10-87392 (1998-04-01), None

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