Fishing – trapping – and vermin destroying
Patent
1994-08-29
1996-09-03
Fourson, George
Fishing, trapping, and vermin destroying
437192, H01L 2144
Patent
active
055523390
ABSTRACT:
A method of metallization using a tungsten plug is described. Semiconductor device structures are formed in and on a semiconductor substrate. An insulating layer covers the semiconductor structures and a contact hole has been opened through the insulating layer to the semiconductor substrate. A glue layer is deposited conformally over the surface of the insulating layer and within the contact opening. The glue layer is annealed to stuff the grain boundaries in the glue layer. A layer of amorphous-silicon is deposited overlying the glue layer to prevent tungsten hexafluoride penetration through and reaction with the glue layer during subsequent tungsten deposition. A tungsten plug is formed within the contact opening wherein the amorphous-silicon and the annealed glue layer prevent peeling of the glue layer and of the tungsten in the fabrication of an integrated circuit.
REFERENCES:
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5134092 (1992-07-01), Matsumoto et al.
patent: 5173450 (1992-12-01), Wei
patent: 5175126 (1992-12-01), Ho et al.
patent: 5183782 (1993-02-01), Onishi et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
Everhart C.
Fourson George
Pike Rosemary L. S.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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