Fundamental, longitudinal, thickness mode bulk wave resonator

Details Fundamental, longitudinal, thickness mode bulk wave resonator Fundamental, longitudinal, thickness mode bulk wave resonator

1980-11-03

1982-03-16

Nussbaum, Marvin L.

Wave transmission lines and networks

Coupling networks

Electromechanical filter

333189, 333191, H03H 917, H03H 9205, H03H 950, H03H 956

Patent

active

043203655

ABSTRACT:
A substrate (10) is thinned to provide a membrane (12) on which are disposed a counter electrode (20), a film of low conductivity piezoelectric material (22) and a top electrode (24) to form a half wavelength, bulk mode resonator employing a longitudinal acoustic wave. A second top electrode (25) provides a second resonator acoustically coupled to the first, to form a filter. Piezoelectric films include zinc oxide, and aluminum nitride; substrates include silicon and aluminum oxide. A buffer layer (18), such as silicon dioxide may assist in preventing surface aberations and providing proper crystallographic orientation.

REFERENCES:
patent: 3401275 (1968-09-01), Curran et al.
patent: 3582839 (1971-06-01), Pim et al.
patent: 3697788 (1972-10-01), Parker et al.

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