Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...
Patent
1994-04-13
1995-11-21
O'Shea, Sandra L.
Electric lamp and discharge devices
Discharge devices having a multipointed or serrated edge...
313308, 313336, 313351, 313355, H01J 130
Patent
active
054690153
ABSTRACT:
A vacuum microelectronic field-emission device includes: a substrate; an emitter portion formed to have at least an wedge portion extending in parallel to the substrate, the emitter portion being supported by the substrate; a gate portion formed a first given distance apart from the tip of the emitter portion, the gate portion being supported by the substrate, the gate portion being electrically insulated from the emitter portion; and a collector portion formed a second given distance apart from a tip of the emitter portion, the collector portion being supported by the substrate, the second given distance is equal to or larger than the first given distance, the collector portion being electrically insulated from the emitter portion and the gate portion.
REFERENCES:
patent: 4163949 (1979-08-01), Shelton
patent: 4578614 (1986-03-01), Gray et al.
patent: 4904895 (1990-02-01), Tsukamoto et al.
patent: 4987377 (1991-01-01), Gray et al.
patent: 5189341 (1993-02-01), Itoh et al.
patent: 5204581 (1993-04-01), Andreadakis et al.
patent: 5214346 (1993-05-01), Komatsu
patent: 5217401 (1993-06-01), Watanabe et al.
patent: 5243252 (1993-09-01), Kaneko et al.
"Vacuum microtriode characteristics" by W. N. Carr, et al; J. Vac. Sci. Technol. A 8 (4), Jul./Aug. 1990, pp. 3581-3585.
"Fabrication and Operation of Silicon Micro-Field-Emitter-Array" by Keiichi BETSUI, Autumn Meeting of Japanese Society of Electronics and Information Communications, pp. 5-282-5-283.
"Fabrication and characterization thin film field emiters" by Junji Itho, et al, Report on the 3rd International Vacuum Microelectronics Conference, 1990, p. 1209.
"A vacuum field effect transistor using silicon field emitter arrays" by H. F. Gray, et al, IEDM 86, pp. 766-779.
Kaneko Akira
Kanno Toru
Morishita Keiko
Matsushita Electric - Industrial Co., Ltd.
O'Shea Sandra L.
Patel Ashok
LandOfFree
Functional vacuum microelectronic field-emission device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Functional vacuum microelectronic field-emission device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Functional vacuum microelectronic field-emission device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1139645