Functional thin film member

Stock material or miscellaneous articles – Composite – Of inorganic material

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428689, 428697, 428698, 428699, 428700, 428701, 428702, B32B 900

Patent

active

054036739

ABSTRACT:
A functional thin film member is composed of an insulating substrate; a first single crystal thin film layer which contains at least one atom component of Si or Ge, formed on the insulating substrate; an intermediate layer with a cubic crystal system and a lattice constant difference of 15% or less with respect to the lattice constant of the single crystal thin film layer, formed on said single crystal thin film layer; and a second single crystal thin film layer of an oxide formed on the intermediate layer. The first single crystal thin film layer may include crystal orientations suitable for the properties of functional members to be provided above the single crystal thin film layer on an identical plane of the surface of the single crystal thin film layer, and the intermediate layer may be formed in at least one portion of the single crystal thin film layer, corresponding to any of the crystal orientations. In this case, a functional element utilizing the second single crystal thin film layer; and a passive or active device which is formed on the first single crystal thin film layer is electrically or optically connected to the functional element or the insulating substrate.

REFERENCES:
patent: 4238559 (1980-12-01), Feng
patent: 4560576 (1985-12-01), Lewis
patent: 4584280 (1986-04-01), Manao
patent: 4766008 (1988-08-01), Kodata
patent: 4783369 (1988-11-01), Sugata
patent: 4907846 (1990-03-01), Tustison
"Formation of Defective & Semiconductor Thin Films by Laser-Assisted Evaporation", Sankur H,; Cheung, J., Appl. Phys. A, vol. 47, 271-284 (1988).

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