Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1993-07-27
1995-12-12
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257691, 257773, 257523, 257536, 437209, 437217, H01L 2348, H01L 2302, H01L 2944
Patent
active
054752620
ABSTRACT:
A semiconductor device is manufactured by subdividing the chip carrier into a plurality of functional substrates, such as a signal connection substrate, a capacitor substrate, a resistor substrate and a power supply substrate. The several substrates are individually manufactured and tested before they are assembled. Advantageously, the manufacturing and testing of the substrates are carried out in parallel, so as to reduce manufacturing time of the semiconductor device.
Each substrate has a top interconnect layer and a bottom interconnect layer. Each interconnect layer has a plurality of bond pads in an identical pattern. The pads are formed using the same design rules, structure, pitch, diameter and fabrication process for each layer. This identity allows the different functional substrates to be electrically interchanged without changing the interconnection layers. Although changes internal in the substrate may be required.
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Chou William T.
Wang Wen-chou V.
Fujitsu Limited
Hille Rolf
Martin Wallace Valencia
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