Functional semiconductor element with avalanche multiplication

Details Functional semiconductor element with avalanche multiplication Functional semiconductor element with avalanche multiplication

1997-07-15

1999-09-14

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 39, 257105, 257 85, H01L 31072, H01L 31017

Patent

active

059526831

ABSTRACT:
A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of i-type layers of what is called a triangular barrier diode (TBD) structure having an n-i-p-i-n, p-i-n-i-p, n-i-p-i-p, n-i-n-i-p, n-i-n-i-n, p-i-n-i-n, p-i-p-i-p, or p-i-p-i-n configuration. By forming a light absorbing layer and a light emitting layer or light modulating layer in this structure, it is possible to function the element as an optical functional element. Furthermore, the addition of a resonant tunneling diode implements a novel function.

REFERENCES:
patent: 4839706 (1989-06-01), Brennan
Chen Appl Phys Lett 39(12), Dec. 15, 1981 "Theory of a Modulated Barrier Photodiode".
Kovacic et al IEEE Elec. Dev. Lett. vol. 14 No. 2 Feb. 1993 "InP/InGaAsP . . . Switch".
Sze, Physics of Semiconductor Devices, 1982 pp. 766-777 John Wiley & Sons N.Y.
Sze, Physics of Semiconductor Devices 1982.

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