Functional elemental device and FET sensor provided with the sam

Details Functional elemental device and FET sensor provided with the sam Functional elemental device and FET sensor provided with the sam

1990-05-08

1991-03-19

James, Andrew J.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 61, 357 2315, 357 65, 204294, H01L 2966, H01L 2996

Patent

active

050015311

ABSTRACT:
A functional elemental device and an FET sensor provided with the same, formed by forming a conductive carbide layer between the substrate and a conductive carbon material layer, and organic thin films and were formed on the surface of said conductive carbon material layer.
Thereby, the adhesiveness between the substrate and the conductive carbon material layer can be remarkably improved, and peeling does not occur in the case of electrolytic polymerization reaction and film formation, and since the interstitial ions and the like from the substrate can be prevented, the lowering of the function can be prevented, and therefore, there is attained such an effect that the preparation of a thin film covered electrode becomes possible.

REFERENCES:
patent: 4137355 (1979-01-01), Heaps et al.
patent: 4836904 (1989-06-01), Armstrong et al.

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