Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-09-11
2007-09-11
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S103000, C257S059000, C257S072000, C257S089000, C438S022000, C438S209000, C438S210000, C313S501000
Reexamination Certificate
active
11174614
ABSTRACT:
A functional device including on a substrate a first electrode layer, a second electrode layer opposed to the first electrode layer, a functional layer disposed between the first electrode layer and the second electrode layer and a wiring for applying a potential to the first electrode layer or the second electrode layer, wherein there are provided a first insulating layer formed on the second electrode layer in such an arrangement that the side wall of the functional layer is covered and a contact hole formed in the first insulating layer extending to the second electrode layer in which the wiring for connecting the second electrode layer is provided.
REFERENCES:
patent: 2003/0194168 (2003-10-01), Ouchi
patent: 2004/0012058 (2004-01-01), Aoki
patent: 58-103165 (1983-06-01), None
patent: 2002-502120 (2002-01-01), None
patent: 2002-83946 (2002-03-01), None
patent: 2003-502847 (2003-01-01), None
patent: 3405099 (2003-05-01), None
Erdem Fazli
Fujifilm Corporation
Purvis Sue A.
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