Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2002-11-08
2008-03-04
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE27131, C349S043000, C438S034000
Reexamination Certificate
active
07339192
ABSTRACT:
An active-matrix substrate30includes multiple function lines31,a structure for fixing up the arrangement of the function lines, a first conductive layer43,a second conductive layer42,multiple transistors32and multiple pixel electrodes33.Each of the function lines31includes: a core36,at least the surface of which has electrical conductivity; an insulating layer37that covers the surface of the core; and a semiconductor layer38that covers the insulating layer. Some portions of the first and second conductive layers43and42overlap with the respective semiconductor layers of the function lines but the others not. The transistors32are provided so as to have their channel defined as a region44in the semiconductor layer by the first and second conductive layers. The pixel electrodes33are electrically connected to the first conductive layer43.
REFERENCES:
patent: 5286659 (1994-02-01), Mitani et al.
patent: 5798806 (1998-08-01), Tsutsui et al.
patent: 5892558 (1999-04-01), Ge et al.
patent: 6690438 (2004-02-01), Sekiguchi
patent: 6885028 (2005-04-01), Nishiki et al.
patent: 7019727 (2006-03-01), Yokoyama
patent: 2004/0170288 (2004-09-01), Maeda
patent: 62-165368 (1987-07-01), None
patent: 04-219735 (1992-08-01), None
patent: 06-096631 (1994-04-01), None
patent: 07-092493 (1995-04-01), None
patent: 09-0829967 (1997-03-01), None
patent: 09-203910 (1997-08-01), None
patent: 09-266315 (1997-10-01), None
patent: 10-091097 (1998-04-01), None
patent: 11-024106 (1999-01-01), None
patent: 11-052419 (1999-02-01), None
Wu et al. “Integration of Organic LED's and Amorphous Si TFT's onto Flexible and Lightweight Metal Foil Substrates”, Dec. 1997, IEEE Electron Device Letters, vol. 18, No. 12, pp. 609-612.
Serikawa et al., “High-Mobility Poly-Si TFT's Fabricated on Flexible Stainless-Steel Substrates”, IEEE Elec. Device Let., Vol. 20, No. 11, Nov. 1999.
Hatano Akitsugu
Nishiki Hirohiko
Sakai Osamu
Keating & Bennet, LLP
Kraig William
Lee Eugene
Sharp Kabushiki Kaisha
LandOfFree
Function line and transistor array using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Function line and transistor array using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Function line and transistor array using the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3973161